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| SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE ISSUE 2 - OCTOBER 1995 FMMD914 2 DIODE PIN CONNECTION PARTMARKING DETAIL 5D 1 3 ! SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Working Peak Reverse Voltage Average Rectified Forward Current at Tamb=25C Repetitive Peak Forward Current Power Dissipation at Tamb = 25C Operating and Storage Temperature Range SYMBOL VRWM IF(AV) IFRM Ptot Tj:Tstg VALUE 75 75 225 330 -55 to +150 UNIT V mA mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. 75 1 25 50 8 4 Total Capacitance Forward Recovery Voltage Rectification Efficiency CT VFM(REC) r MAX. UNIT CONDITIONS. V V A Reverse Breakdown Voltage VBR Forward Voltage Static Reverse Current Reverse Recovery Time VF IR trr IR=100A IF=10mA VR=20V VR=20V, Tamb=150 C IF= IRM=10mA,IRR =1mA RL=100 IF=10mA,IRR =1mA, VR=6V RL=100 VR=0, f=1MHz IF=50mA, RL=50 VR=2V,RL=5k, CL=20pF Zsource=50, f=100MHz nA ns ns pF V % 4 2.5 45 Spice parameter data is available upon request for this device PAGE NUMBER |
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